/ (s tiu s.monau.co'i ioavlci, ne , li 20 stern ave. telephone: (973) 376-2922 springfield, new jersey 07081 (212) 227-6005 u.s.a. fax: (973) 376-8960 mur1610ct, mur1615ct, mur1620ct, MUR1640CT, mur1660ct switchmode? power rectifiers these state-of-the-art devices are a series designed for use in switching power supplies, inverters and as free wheeling diodes. ultrafast rectifiers features ^ t. 16 amperes, 100-600 volts ? ultrafast 35 and 60 nanosecond recovery times ? 175c operating junction temperature ? popular to-220 package ! 0 ^| ? epoxy meets ul 94 v-0 @ 0.125 in 02,4 ? high temperature glass passivated junction 3 w ? high voltage capability to 600 v ? low leakage specified @ 150c case temperature ? current derating @ both case and ambient temperatures ? pb-free packages are available* mechanical characteristics: ? case: epoxy, molded mif to-220ab ? weight: 1.9 grams (approximately) ? finish: all external surfaces corrosion resistant and terminal leads are readily solderable ? lead temperature for soldering purposes: 260c max. for 10 seconds nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
mur1610ct, mur1615ct, mur1620ct, MUR1640CT, mur1660ct maximum ratings rating peak repetitive reverse voltage working peak reverse voltage dc blocking voltage average rectified forward current per leg total device, (rated vr), tc = 150c total device peak rectified forward current per diode leg (rated vr, square wave, 20 khz), tc = 1 50c nonrepetjtive peak surge current (surge applied at rated load conditions hahwave, single phase, 60 hz) operating junction temperature and storage temperature symbol vrrm vrwm vr !f(av) ifm 'fsm tj, tstg mur16 10ct 15ct 20ct 100 150 200 40ct 400 60ct 600 8.0 16 16 100 -65 to +175 unit v a a a o stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. thermal characteristics (per diode leg) parameter maximum thermal resistance, junction-to-case symbol rbjc value 3.0 2.0 unit c/w electrical characteristics (per diode leg) characteristic maximum instantaneous forward voltage (note 1) (if = 8.0 a, tc = 150c) (if = 8.0 a, tc = 25c) maximum instantaneous reverse current (note 1) (rated dc voltage, tc = 150c) (rated dc voltage, tc = 25c) maximum reverse recovery time (if = 1 .0 a, di/dt = 50 a/us) (if = 0.5 a, ir = 1 .0 a, irec = 0.25 a) symbol vf ir trr 1620 0.895 0.975 250 5.0 35 25 1640 1.00 1.30 1660 1.20 1.50 500 10 60 50 unit v ha ns 1. pulse test: pulse width = 300 us. duty cycle < 2.0%
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